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Synchronization of two memristive coupled van der Pol oscillators

机译:两个忆阻耦合van der pol振子的同步

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摘要

The objective of this paper is to explore the possibility to couple two vander Pol (vdP) oscillators via a resistance-capacitance (RC) network comprisinga Ag-TiOx-Al memristive device. The coupling was mediated by connecting thegate terminals of two programmable unijunction transistors (PUTs) through thenetwork. In the high resistance state (HRS) the memresistance was in the orderof MOhm leading to two independent selfsustained oscillators characterized bythe different frequencies f1 and f2 and no phase relation between theoscillations. After a few cycles and in dependency of the mediated pulseamplitude the memristive device switched to the low resistance state (LRS) anda frequency adaptation and phase locking was observed. The experimental resultsare underlined by theoretically considering a system of two coupled vdPequations. The presented neuromorphic circuitry conveys two essentialsprinciple of interacting neuronal ensembles: synchronization and memory. Theexperiment may path the way to larger neuromorphic networks in which thecoupling parameters can vary in time and strength and are realized bymemristive devices.
机译:本文的目的是探讨通过包含Ag-TiOx-Al忆阻器件的电阻电容(RC)网络耦合两个vander Pol(vdP)振荡器的可能性。通过网络连接两个可编程单结晶体管(PUT)的栅极端子来介导耦合。在高阻态(HRS)中,忆阻处于MOhm量级,导致两个独立的自持振荡器,其特征在于频率f1和f2不同,并且振荡之间没有相位关系。在几个周期之后,根据介导的脉冲幅度,忆阻器件切换到低电阻状态(LRS),并观察到频率适应和锁相。通过理论上考虑两个耦合vdPequations的系统来强调实验结果。提出的神经形态电路传达了相互作用的神经元集成的两个基本原理:同步和记忆。实验可能会通向更大的神经形态网络,其中耦合参数可随时间和强度变化,并通过忆阻装置实现。

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